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| Datasheet File OCR Text: |
| NTE478 Silicon NPN Transistor RF Power Output, PO = 100W @ 175MHz Description: The NTE478 is a 12.5 Volt epitaxial silicon NPN planar transistor designed primarily for VHF communications. This device utilizes diffused emitter resistors to achieve infinite VSWR under operating conditions, and is internally input matched to optimize power gain and efficiency over the band. Features: D Designed for VHF Military and Commercial Equipment D 100W Min with Greater than 6.0dB Gain D Withstands Infinite VSWR under Operating Conditions D Low Intermodulation Distortion (-32dB) D Diffused Emitter Resistors Absolute Maximum Ratings: (TC = +25C unless othrwise specified) Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V Maximum Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A Total Device Dissipation (At +25C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 270W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65C/W Electrical Characteristic: (TC = +25C unless otherwise specified) Parameter Static Collector-Emitter Breakdown Voltage V(BR)CEO IC = 100mA, IB = 0, Note 1 V(BR)CES IC = 100mA, VBE = 0, Note 1 Emitter-Base Breakdown Voltage Collector Cutoff Current DC Current Gain V(BR)EBO IE = 10mA, iC = 0 ICBO hFE VCB = 12V, IE = 0 VCE = 6V, IC = 5A 18 36 4 - 10 - - - - - - - - 10 - V V V mA Symbol Test Conditions Min Typ Max Unit Note 1. Pulsed through 25mH indicator. Electrical Characteristic (Cont'd): (TC = +25C unless otherwise specified) Parameter Static Output Power Power Gain Impedance PO PG Zs Zcl Output Capacitance Cob VCB = 12V, IE = 0, f = 1MHz VCE = 12.5V, f = 175MHz VCE = 12.5V, f = 175MHz VCE = 12.5V, Pi = 20W, f = 175MHz 100 6 - - - - 7 1.5- j0.9 0.5- j0.1 354 - - - - - W dB pF Symbol Test Conditions Min Typ Max Unit .205 (5.18) .215 (5.48) .122 (3.1) Dia E .405 (10.3) Min B C E .155 (3.94) .500 (12.7) Dia .005 (0.15) .270 (6.85) .160 (4.06) .725 (18.43) .975 (24.78) |
Price & Availability of NTE478
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